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| STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESHTM IGBT Table 1: General Features TYPE STGD5NB120SZ STGD5NB120SZ-1 s Figure 1: Package VCE(sat) < 2.0 V < 2.0 V IC 5A 5A VCES 1200 V 1200 V s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH VOLTAGE CLAMPING FEATURES 3 1 2 1 3 DPAK IPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping. Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER s INRUSH CURRENT LIMITATION s PRE-HEATING FOR ELECTRONIC LAMP BALLAST s Table 2: Order Code PART NUMBER STGD5NB120SZT4 STGD5NB120SZ-1 MARKING GD5NB120SZ GD5NB120SZ PACKAGE DPAK IPAK PACKAGING TAPE & REEL TUBE Rev. 2 January 2005 1/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) PTOT Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Eas (1) Tstg Tj Single Pulse Avalanche Energy at Tj = 25C Single Pulse Avalanche Energy at Tj = 100C Storage Temperature Operating Junction Temperature range Value 1200 20 20 10 5 20 55 0.44 10 7 -55 to 150 150 Unit V V V A A A W W/C mJ mJ C C ( ) Pulse width limited by safe operating area (1) VCE = 50 V , IAV = 3.3 A Table 4: Thermal Data Min. Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Typ. Max. 2.27 100 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol VBR(CES) ICES IGES VGE(th) VGE VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Gate Emitter Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 10 mA, VGE = 0 V VCE = 900 V VCE = 900 V, Tj = 125 C VGE = 20V , VCE = 0 V VCE = VGE, IC = 250 A VCE =2.5 V, IC = 2 A, Tj = 25/125C VGE = 15V, IC = 5 A VGE = 15V, IC = 5 A, Tj =125C 1.3 1.2 2 Min. 1200 50 250 100 5 6.5 2.0 Typ. Max. Unit V A A nA V V V V 2/13 STGD5NB120SZ-1 - STGD5NB120SZ ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs Cies(*) Coes(*) Cres(*) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VCE = 25 V , IC = 5 A VCE = 25V, f = 1 MHz, VGE = 0V Min. Typ. 5 430 40 7 4 Max. Unit S pF pF pF K (1) Pulsed: Pulse duration= 300 s, duty cycle 1.5% Table 7: Switching On Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Delay Time Current Rise Time Turn-on Current Slope Dealy Time Current Rise Time Turn-on Current Slope Test Conditions IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1K Tj = 25C ICC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1K Tj = 125C Min. Typ. 690 170 39.6 600 185 39 Max. Unit ns ns A/s ns ns A/s Table 8: Switching Off Symbol tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf Parameter Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time Test Conditions IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1K Tj = 25C IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive = 1K Tj = 125C Min. Typ. 4 2.2 12.1 1.13 5 2.2 12.1 2 Max. Unit s s s s s s s s Table 9: Switching Energy Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameterr Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 18) VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 18) Min. Typ. 2.59 9 11.59 2.64 10.2 12.68 Max Unit mJ mJ mJ mJ mJ mJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. (3) Turn-off losses include also the tail of the collector current. 3/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 10: Functional Test Symbol Ias ICL Parameterr Unclamped inductive switching current Latching Current Test Conditions VCC = 50 V, L= 1.8 mH Tstart = 25C, Rdrive = 1K VCLAMP = 960 V, Tj =125C Rdrive = 1K Min. 3.3 10 Typ. Max Unit A A 4/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 9: Gate Threshold vs Temperature Figure 12: Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 13: Gate-Charge vs Gate-Emitter Voltage Figure 11: Switching Losses vs Gate Resistance Figure 14: Switching Losses vs Collector Current 6/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 15: Thermal Impedance Figure 16: Turn-Off SOA 7/13 STGD5NB120SZ-1 - STGD5NB120SZ Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit Figure 18: Switching Waveforms Figure 20: Diode Recovery Time Waveforms 8/13 STGD5NB120SZ-1 - STGD5NB120SZ TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 9/13 STGD5NB120SZ-1 - STGD5NB120SZ TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 10/13 STGD5NB120SZ-1 - STGD5NB120SZ DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 11/13 STGD5NB120SZ-1 - STGD5NB120SZ Table 11: Revision History Date 06-Oct-2003 18-Jan-2005 Revision 1 2 First release Final datasheet Description of Changes 12/13 STGD5NB120SZ-1 - STGD5NB120SZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13 |
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